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Study of vacancy-type defects after post-growth annealing of undoped GaAs V. Bondarenko, K.Petters and R. Krause-Rehberg Introduction • SI GaAs one of the most common materials for semiconductor devices
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Document Date: 2006-06-15 12:02:18
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Study of vacancy-type defects after post-growth annealing of undoped GaAs V. Bondarenko, K.Petters and R. Krause-Rehberg Introduction • SI GaAs one of the most common materials for semiconductor devices