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Gallium nitride / Indium gallium nitride / Indium nitride / Nichia Corporation / Aluminium gallium nitride / Aluminium nitride / Gallium phosphide / Metalorganic vapour phase epitaxy / Ultraviolet / Chemistry / Nitrides / Light-emitting diode


doi:S0961
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Document Date: 2008-01-18 01:04:59

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City

Glasgow / /

Company

Nichia Corp / Diodes / Nitride Semiconductors / /

Country

Taiwan / Canada / China / Singapore / Japan / /

Event

Person Travel / /

Facility

Ritsumeikan University / University of Strathclyde / Fukui University / University of San Paulo / MOCVD InN / Wurtzite InN / /

IndustryTerm

near infrared devices / printing / process technology / biosensor applications / chemical mechanical polishing / low 10E18 carrier concentrations / metal contact / metal adhesion / device applications / data-communications / /

NaturalFeature

Mesa heights / /

Organization

University of Strathclyde / Fukui University / Ritsumeikan University / University of San Paulo / /

Person

Daisuke Morita / Alan Mills / /

Position

Forward / /

ProgrammingLanguage

DC / /

Technology

laser / X-ray / lasers / 1mm LED chips / chemical mechanical polishing / UV LED technology / process technology / planarisation / CMP / /

SocialTag