Back to Results
First PageMeta Content
Computer memory / Phase-change memory / GeSbTe / Influenza / Emerging technologies / Non-volatile memory / Chemistry


E*PCOS2008 Recent Progress of Phase Change Random Access Memory (PRAM)
Add to Reading List

Document Date: 2011-09-07 11:24:05

Open Document

File Size: 230,03 KB

Share Result on Facebook

City

Yongin-City / /

Company

Linde / H. Horii S. A. / Samsung Electronics Co. Ltd. / /

/

/

IndustryTerm

technology scaling / chemical vapor deposition / optical data storage media / phase-change material technology / 50nm contact cell technology / 180nm nonvolatile memory cell element technology / present technology node / chemical analysis / chemical mechanical polishing / /

Organization

MLC PRAM / /

Person

Hideki Horii / S. H. Choi / Stanford Ovshinsky / /

/

ProvinceOrState

D1 / D0 / /

Technology

50nm contact cell technology / crystallization / chemical mechanical polishing / Laser / phase-change material technology / 180nm nonvolatile memory cell element technology / Random Access / PRAM technology / nonvolatile memory / Flash / CVD / programming algorithm / dielectric / chemical vapor deposition / CMP / /

SocialTag