| Document Date: 2003-02-11 04:15:59
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City Tokyo / Washington / DC / Amsterdam / Roskide / New York / Oxford / / Company Bulk Semiconductors / Ó 2000 Elsevier Science B.V. / Ge / F.J. Navarro L.C. / RisùNational Laboratory / / Country Denmark / / / Facility Institute of Semiconductors / Wuhan University / / / IndustryTerm potential tool / carrier concentration / defect site / energy gap / electronic devices / energy resolution / chemical surrounding / energy / / Organization National Natural Science Foundation of China / S.J. Wang Department of Physics / Institute of Semiconductors of China / Wuhan University / Wuhan / / Person A.P. Mills jr. / Van Nostrand Reinhold / / / Position VP / Corresponding author / / Product B 52 / B 47 / / ProvinceOrState New York / / Technology semiconductor / semiconductors / Spectroscopy / / URL www.elsevier.nl/locate/nimb / /
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Nuclear Instruments and Methods in Physics Research B±148 www.elsevier.nl/locate/nimb Application of positron lifetime distribution to the discrimination of defects in semiconductors