<--- Back to Details
| First Page | Document Content | |
|---|---|---|
 Date: 2013-09-24 02:37:46Chemistry Matter Crystallographic defects Optical materials Superhard materials Nitrides Gallium nitride Light-emitting diode Quantum efficiency Dislocation IQE Stacking fault |
Add to Reading List |
Enhanced light output power and growth mechanism of GaN-based light-emitting diodes grown on cone-shaped SiO2 patterned template. 學生:陳政勤 學號:
