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	Reducing Gate-Driven Leakage in 2D Semiconductors: Two-dimensional materials such as graphene and MoS2 have a wide range of bandgaps and effective masses, making them suitable for many different applications including m Add to Reading List Document Date: 2017-10-16 22:17:26 Open Document File Size: 928,80 KB Share Result on Facebook

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Reducing Gate-Driven Leakage in 2D Semiconductors: Two-dimensional materials such as graphene and MoS2 have a wide range of bandgaps and effective masses, making them suitable for many different applications including mAdd to Reading List