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Variable-level Cells for Nonvolatile Memories Anxiao (Andrew) Jiang Hongchao Zhou Jehoshua Bruck
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Document Date: 2011-10-03 00:08:45


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File Size: 215,31 KB

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City

Seoul / Station / Nice / Hoboken / New York / /

Company

John Wiley & Sons Inc. / G1 / BT / Andrew / /

Country

France / Korea / /

Currency

pence / cent / /

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Facility

Dept. Texas A&M University College Station / Electrical Engineering Dept. California Institute of Technology Pasadena / /

IndustryTerm

memory technologies / /

NaturalFeature

q=3 Partial-erasure channel / µj stream / /

Organization

Texas A&M University / Electrical Engineering Dept. California Institute of Technology Pasadena / /

Person

A. Jiang / V / Yt / Ai / Jiang Hongchao Zhou Jehoshua Bruck / /

/

Position

following simple probabilistic model for VLC / /

ProgrammingLanguage

R / T / /

ProvinceOrState

Texas / New Jersey / Montana / New York / California / /

PublishedMedium

IEEE Transactions on Information Theory / /

Technology

flash memory / Nonvolatile memory technologies / flash / /

SocialTag