<--- Back to Details
First PageDocument Content
Nanoelectronics / Nanowire / Monolithic microwave integrated circuit / Gallium arsenide / High electron mobility transistor / Nanotechnology / Microelectromechanical systems / Nanolithography / Chemistry / Electronics / Electromagnetism
Date: 2014-05-08 07:14:22
Nanoelectronics
Nanowire
Monolithic microwave integrated circuit
Gallium arsenide
High electron mobility transistor
Nanotechnology
Microelectromechanical systems
Nanolithography
Chemistry
Electronics
Electromagnetism

Energy Harvesting & Energy Efficient Micro / Nanoelectronics @ Glasgow Prof Douglas J. Paul Director: James Watt Nanofabrication Centre School of Engineering, University of Glasgow

Add to Reading List

Source URL: www.ict-energy.eu

Download Document from Source Website

File Size: 1,69 MB

Share Document on Facebook

Similar Documents

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 6, DECEMBERThermocapillary Actuation of Droplets on Chemically Patterned Surfaces by Programmable

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 6, DECEMBERThermocapillary Actuation of Droplets on Chemically Patterned Surfaces by Programmable

DocID: 1u77o - View Document

Microsoft Word - 03-YCai_MEMSIC_CStudy_jw6_dh1_20081023.doc

Microsoft Word - 03-YCai_MEMSIC_CStudy_jw6_dh1_20081023.doc

DocID: 1r6kx - View Document

VG800  LOW DRIFT MEMS VERTICAL GYRO The MEMSIC VG800 establishes a new level of performance for standalone “unaided” inertial

VG800 LOW DRIFT MEMS VERTICAL GYRO The MEMSIC VG800 establishes a new level of performance for standalone “unaided” inertial

DocID: 1r3e5 - View Document

Combinatorial Multilevel Mold Insert Using Micromachining and X-ray Lithography V. Singh1, J. Goettert1, O. Jinka1,2,* 1  Center for Advanced Microstructures and Devices (CAMD)

Combinatorial Multilevel Mold Insert Using Micromachining and X-ray Lithography V. Singh1, J. Goettert1, O. Jinka1,2,* 1 Center for Advanced Microstructures and Devices (CAMD)

DocID: 1qVW9 - View Document

PRESS RELEASERUSNANO Exits from SiTime with Yield Above 25% RUSNANO is exiting its portfolio investment in SiTime Corporation (Sunnyvale, USA), which develops high-performance semiconductor chips using MEMS t

PRESS RELEASERUSNANO Exits from SiTime with Yield Above 25% RUSNANO is exiting its portfolio investment in SiTime Corporation (Sunnyvale, USA), which develops high-performance semiconductor chips using MEMS t

DocID: 1qQgR - View Document