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Electronic Properties and Gap State Defect Passivation of Si/SiO2 Nanostructures Bert Stegemann, Daniel Sixtensson, Manfred Schmidt Hahn Meitner Institute Berlin, Dept. Silicon Photovoltaics, Kekuléstr.5, DBerlin
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Document Date: 2010-05-11 12:46:16
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File Size: 2,47 MB
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City
Berlin /
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Currency
pence /
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Facility
Manfred Schmidt Hahn Meitner Institute /
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IndustryTerm
bandgap energy /
adequate analytical tools /
excess energy /
quantum well device /
chemical /
energy range /
chemical shift /
charge carrier recombination /
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OperatingSystem
FERMI /
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Organization
Manfred Schmidt Hahn Meitner Institute Berlin /
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Person
Bert Stegemann /
Daniel Sixtensson /
Manfred Schmidt Hahn /
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Technology
spectroscopy /
x-ray /
recombination /
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SocialTag
Silicon
Energy conversion
Energy harvesting
Solar cell
Band gap
Thermal oxidation
Silicon dioxide
Passivation
Chemistry
Technology