Electronic Properties and Gap State Defect Passivation of Si SiO2 Nanostructures Bert Stegemann, Daniel Sixtensson, Manfred Schmidt Hahn Meitner Institute Berlin, Dept. Silicon Photovoltaics, Kekuléstr.5, DBerlin - Phonon scattering - Document - PDFSEARCH.IO

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	Electronic Properties and Gap State Defect Passivation of Si/SiO2 Nanostructures Bert Stegemann, Daniel Sixtensson, Manfred Schmidt Hahn Meitner Institute Berlin, Dept. Silicon Photovoltaics, Kekuléstr.5, DBerlin Add to Reading List Document Date: 2010-05-11 12:46:16 Open Document File Size: 2,47 MB Share Result on Facebook City Berlin / / Currency pence / / / Facility Manfred Schmidt Hahn Meitner Institute / / IndustryTerm bandgap energy / adequate analytical tools / excess energy / quantum well device / chemical / energy range / chemical shift / charge carrier recombination / / OperatingSystem FERMI / / Organization Manfred Schmidt Hahn Meitner Institute Berlin / / Person Bert Stegemann / Daniel Sixtensson / Manfred Schmidt Hahn / / Technology spectroscopy / x-ray / recombination / / SocialTag Silicon Energy conversion Energy harvesting Solar cell Band gap Thermal oxidation Silicon dioxide Passivation Chemistry Technology

Electronic Properties and Gap State Defect Passivation of Si/SiO2 Nanostructures Bert Stegemann, Daniel Sixtensson, Manfred Schmidt Hahn Meitner Institute Berlin, Dept. Silicon Photovoltaics, Kekuléstr.5, DBerlinAdd to Reading List