University of Notre Dame / Columbia University / /
IndustryTerm
field-effect devices / charge carrier density / characteristic phonon energy / energy window / self-consistent solution / phonon energy / carrier distribution function / carrier density / fixed charge carrier densities / graphene devices / carrier densities / possible applications / nanoscale electronics / carrier density dependent / energy / surface phonon energy / optical phonon energy / /
OperatingSystem
Fermi / /
Organization
Columbia University / T. J. Watson Research Center / Institution of Electrical Engeneers / University of Notre Dame / /
Person
D. Mann / S. V. Rotkin / V / Aniruddha Konar / K. E. Goodson / Z. Chen / V / Addison Wesley Longman / Q. Wang / Gary L. Harris / James F. Shackelford / H. J. Dai / Marcus Freitag / Nat / Y. Martin / V / J. Cao / William Alexande / Francesco Mauri / W. Zhu / V / Amelia Barreiro / / /
Inelastic Scattering and Current Saturation in Graphene Vasili Perebeinos∗ and Phaedon Avouris† arXiv:1003.2455v1 [cond-mat.mes-hall] 12 MarIBM Research Division, T. J. Watson Research Center, Yorktown Heights