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Exciton Binding Energy of Monolayer WS2 Bairen Zhu+ ,Xi Chen+ ,Xiaodong Cui1, ∗ 1 Department of Physics, The University of Hong Kong, Hong Kong, China (Dated: March 21, 2014)
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Document Date: 2014-03-20 20:24:57


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Company

ACS / Shimizu / SOC / /

Country

China / /

Currency

pence / /

/

Facility

The University of Hong Kong / /

IndustryTerm

monolayer transition metal dichalcogenides / ground exciton energy / thin 2D systems / trion binding energy / giant exciton binding energy / pulsed excitation energy / photon energy / 2D systems / precise tool / low dimensional systems / excitation energy / point / exciton energy / direct-gap exciton binding energy / carrier density / peak energy values / energy dependence / energy blue-shift / metal atoms / exciton binding energy / energy difference / energy / /

OperatingSystem

Fermi / /

Organization

University of Hong Kong / Hong Kong / Physical Society of Japan / Department of Physics / /

Person

Z. Liu / J. Kong / M. S. Dresselhaus / A. Reina / /

PublishedMedium

Journal of the Physical Society of Japan / Physical Review Letters / /

Technology

quantum dots / laser / semiconductors / dielectric / spectroscopy / lithography / simulation / /

SocialTag