Reducing Gate-Driven Leakage in 2D Semiconductors: Two-dimensional materials such as graphene and MoS2 have a wide range of bandgaps and effective masses, making them suitable for many different applications including m

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Date: 2017-10-16 22:17:26		Reducing Gate-Driven Leakage in 2D Semiconductors: Two-dimensional materials such as graphene and MoS2 have a wide range of bandgaps and effective masses, making them suitable for many different applications including m Add to Reading List Source URL: btbmarketing.com Download Document from Source Website File Size: 928,80 KB Share Document on Facebook