J.G. Champlain N.A. / Teledyne Corporations / World Scientific / Heteroepitaxial Systems / Grumman / B.R. Bennett B.V. / Naval Research Laboratory / J.B. Boos N.A. / G.E. Triplett A.S. / J. Lee N.A. / 3M / M.G. Ancona N.A. / /
Country
United States / Singapore / / /
IndustryTerm
energy levels / satellite peaks / superlattice satellite peaks / large-scale manufacturing costs / wet chemical etching / high carrier mobilities / carrier confinement / metal contacts / mixed-signal applications / materials systems / Sheet carrier densities / /
MusicGroup
LNA / /
Organization
office of Naval Research / /
Person
M.G. Ancona / J.Y. Lim / K. Hennig / B.V. Shanabrook / P.J. Wilding / Al Ga Sb / Brad Boos / J. Mittereder / M.J. Uren / C.H. Yang / D. Park / P.H. Liu / M.D. Lange / S.J. Smith / Northrop / R. Tsai / M.J. Yang / M.E. Twigg / C. Namba / W. Kruppa / BRIAN R. BENNETT / A. Gutierrez / R. Bass / R. Grundbacker / T. Rakshit / D.J. Wallis / R. Magno / W.J. Moore / Al(Ga)Sb / S.H. Shin / R. Chau / /
Journal of ELECTRONIC MATERIALS, Vol. 39, No. 10, 2010 DOI: [removed]s11664[removed] Ó 2010 U.S. Naval Research Laboratory AlGaSb Buffer Layers for Sb-Based Transistors