Ball / Diodes / Vf / Dayeh S. A. / Hess / Nanometer-Scale Technologies / Hitachi / John Wiley & Sons / /
Country
United States / China / / /
Facility
§Beijing Institute of Nanoenergy / Lanzhou University / Georgia Institute of Technology / /
IndustryTerm
metal / typical device / charge carrier density / transportation behavior / metal semiconductor interface / electronic device / important applications / energy band diagrams / metal semiconductor contact/interface / metal nanowire metal structure / metal electrode / metal electrodes / carrier transport process / ll different applications / metal semiconductor junction / short nanowire device / energy / long nanowire device / /
Movie
Conflict of Interest / /
MusicGroup
Figure / /
OperatingSystem
Fermi / /
Organization
American Chemical Society / Chinese Academy of Sciences / African Union / strain/ force / School of Physical Science and Technology / Air Force / Georgia Institute of Technology / Atlanta / Lanzhou University / Lanzhou / School of Materials Science and Engineering / §Beijing Institute of Nanoenergy and Nanosystems / /
Person
MANA NIMS / Cheng-Ying Chen / Lin Wang / Lin Dong / Nat / Ken Pradel / Xue Wang / Frank / Yan Zhang / Caofeng Pan / /
Position
D. J. / piezoelectric driver / forward / /
ProvinceOrState
Alabama / Nova Scotia / Georgia / /
Technology
semiconductor / E. M. Technology / Semiconductor Devices / dielectric / /
Weihua Han,†,‡ Yusheng Zhou,† Yan Zhang,† Cheng-Ying Chen,† Long Lin,† Xue Wang,† Sihong Wang,† and Zhong Lin Wang†,§,* ARTICLE Strain-Gated Piezotronic Transistors