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Nanoelectronics / Quantum mechanics / Quantum point contact / Schottky barrier / Transistor / High electron mobility transistor / Heterojunction / Aluminium gallium arsenide / Shot noise / Electronics / Physics / Electromagnetism


PRL 101, week ending 28 NOVEMBERPHYSICAL REVIEW LETTERS
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Document Date: 2012-07-20 04:39:06

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City

Tokyo / Delft / Regensburg / Amsterdam / New York / /

Company

Sumitomo Electric Industries Ltd. / Special Coordination Funds / ICORP / /

Country

Germany / Japan / /

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Facility

University of Tokyo / Delft University of Technology / Hall bar / Kavli Institute of NanoScience / /

IndustryTerm

typical device / identical carrier depletion width / electron gas / quantum information devices / metal lead / fixed energy / metal gates / nextnano3 software / e-beam / trap energy / split-gate devices / energy / /

NaturalFeature

QPC channel / /

OperatingSystem

Fermi / /

Organization

Atsugi-shi / Institut fu¨r Angewandte / University of Tokyo / Japan Science and Technology Agency / Department of Applied Physics / Delft University of Technology / Kavli Institute of NanoScience / /

Person

Christo Buizert / R. Szweda / III / /

Position

Private / /

Product

nextnano3 software / nextnano3 / /

ProvinceOrState

British Columbia / New York / Georgia / /

PublishedMedium

PHYSICAL REVIEW LETTERS / /

Technology

semiconductor / simulation / /

URL

http /

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