Streiffer / Washington DC / Reading / Austin / New York / /
Company
RBS / GIh (kJ mol—1) LDA / IBM / Ih 200 200 150 150 200 150 LDA / LDA LDA / BP / Klug D. D. / Macmillan Publishers Ltd / Brian J. Kerridge Rutherford Appleton Laboratory / HP / ACS / McGraw-Hill / /
Country
Japan / United Kingdom / / /
Facility
Boston University / National Institute / /
IndustryTerm
diute aqueous solutions / emulsion-carrier sample / free energy / ultralarge-scale integrated dynamic random access memory applications / chemical vapor deposition / multicomponent systems / satellite measurements / liquid source chemical vapor deposition / cell technology / /
Movie
D. / A. I. / /
Organization
Center for Polymer Studies / National Institute for Research / Nuclear Regulatory Commission / National Science Foundation / Cambridge Univ. / Boston University / Boston / Department of Physics / Princeton Univ. / /
Person
Fleissner / William J. Reburn / Johari / H. Eugene Stanley / Richard Siddans / Rosemary Munro / Gallagher / /
Position
G. P. / /
ProgrammingLanguage
L / DC / /
ProvinceOrState
Texas / S. K. / New York / Massachusetts / New Hampshire / /
Technology
radiation / laser / thermodynamics / X-ray / dielectric / crystallization / microwave / radio frequency / ATM / random access / DRAM cell technology / CVD / chemical vapor deposition / /
letters to nature the target range for DRAM applications (1–5 ϫ 10 Ϫ 7 A cm Ϫ 2 ). At this composition, we find er ¼ 62:5 and the FOM is 24.3 C cm−2.