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Leptons / Quantum electrodynamics / Spectroscopy / Semiconductor device fabrication / Ion implantation / Materials science / Annealing / Positron annihilation spectroscopy / Electron / Physics / Condensed matter physics / Chemistry


Applied Surface Science–115 Oxygen-related defects and their annealing behavior in low-dose Separation-by-IMplanted OXygen (SIMOX) wafers studied by slow positron beams Z.Q. Chena,*, Akira Uedonoa, Atsu
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Document Date: 2003-02-11 04:16:15


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Company

Japan Silicon Systems Research Laboratories / Charles Evans and Associates / Elsevier Science B.V. / NEC Corporation / /

Country

Japan / /

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Facility

University of Tsukuba / National Institute of Advanced Industrial Science / /

IndustryTerm

positron implantation energy / variable-energy positron annihilation spectroscopy / positron energy / incident positron energy / positron incident energy / energy / /

Organization

University of Tsukuba / Institute of Applied Physics / National Institute of Advanced Industrial Science and Technology / /

Person

Haruhiko Onob / Ryoichi Suzukic / Atsushi Ogurab / Toshiyuki Ohdairac / Akira Uedonoa / /

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Position

Corresponding author / /

Technology

spectroscopy / /

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