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Electromagnetism / Semiconductor devices / Insulated gate bipolar transistor / Power semiconductor device / Power MOSFET / Transistor / Powerex / Bipolar junction transistor / MOSFET / Electronic engineering / Electronics / Power electronics


Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania[removed][removed]Structure and Operation of IGBT Module 4.0 Using IGBT Modules
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Document Date: 2011-04-20 11:31:40

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City

Youngwood / /

Company

A-29 Powerex Inc. / Dynamic A-31 Powerex Inc. / LG / Advantage A-28 Disadvantage Powerex Inc. / Resistive Load Switching Test Circuit lC / Case / VGE1 RG lC / VGE2 A-32 RG Powerex Inc. / A-35 Powerex Inc. / G (OFF) G C RG (B) CASE-2 SHORT-CIRCUIT lC LI / SHORT lE lC / A-33 Powerex Inc. / Powerex Inc. / Mitsubishi Electric / /

Event

Business Partnership / /

Facility

bridge Switching Test Circuit VGE / Bridge Switching Test Circuit / bridge Mode / /

IndustryTerm

junction device / 1200V devices / control device / carrier lifetime / power conversion applications / wafer processing / manufacturing / Minority carrier / package technology / hard switching applications / power chips / consistent processing / majority carrier condition / emitter-side processing / /

Person

Voltage Diode / /

Position

emitter Cres Reverse Transfer Capacitance Gate-collector / IC Continuous Collector Current Maximum collector / POWER CHIPS H-SERIES IGBT MODULE COLLECTOR / guard / collector / N° P° COLLECTOR / Turn-off Switching SOA COLLECTOR / current ICM Peak Collector / Major / Forward / /

Product

A-36 / /

ProvinceOrState

Pennsylvania / /

Technology

SOA / IGBT chip / Bipolar Transistor / trench gate IGBT chip / package technology / power chips / trench IGBT chip / 3.3 RTC Circuit The F-Series trench gate IGBT chip / IGBT chips / A-30 POWER CHIPS / thus ensuring chips / FWD CHIP COPPER BASE INSULATION MATERIAL COPPER TERMINAL EPOXY RESIN SILICONE GEL ALUMINUM WIRE SILICON CHIP BASEPLATE SEMICONDUCTOR CHIP / /

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