![Thin film deposition / Industrial gases / Semiconductor growth / Semiconductor device fabrication / Molecular beam epitaxy / Gallium arsenide / Liquid nitrogen / High-electron-mobility transistor / Water cooling / Epitaxy / Nitrogen / Metalorganic vapour phase epitaxy Thin film deposition / Industrial gases / Semiconductor growth / Semiconductor device fabrication / Molecular beam epitaxy / Gallium arsenide / Liquid nitrogen / High-electron-mobility transistor / Water cooling / Epitaxy / Nitrogen / Metalorganic vapour phase epitaxy](https://www.pdfsearch.io/img/801537e98e9488489fa89f38d897bd1c.jpg) Date: 2009-05-08 06:40:08Thin film deposition Industrial gases Semiconductor growth Semiconductor device fabrication Molecular beam epitaxy Gallium arsenide Liquid nitrogen High-electron-mobility transistor Water cooling Epitaxy Nitrogen Metalorganic vapour phase epitaxy | | High Mobility HEMT Growth with Water-cooling MBE System T.Takamatsu, S.Takagi and G.Kido National Reserch Institute for Metals 3-13 Sakura, Tsukuba, Ibaraki, Japan High mobility GaAs / AlGaAs HEMT structures werAdd to Reading ListSource URL: www.1974eiko.co.jpDownload Document from Source Website File Size: 31,85 KBShare Document on Facebook
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