<--- Back to Details
First PageDocument Content
Light-emitting diode / Gallium nitride / Indium gallium nitride / Aluminium gallium nitride / Quantum well / Diode / Gallium / Semiconductor / Electron / Chemistry / Matter / Nitrides
Date: 2015-01-23 09:11:11
Light-emitting diode
Gallium nitride
Indium gallium nitride
Aluminium gallium nitride
Quantum well
Diode
Gallium
Semiconductor
Electron
Chemistry
Matter
Nitrides

CS_ad_213x282mm_semiconductor_today_feb14.indd

Add to Reading List

Source URL: www.semiconductor-today.com

Download Document from Source Website

File Size: 790,25 KB

Share Document on Facebook

Similar Documents

6 Publishable Summary OSIRIS project, a Research and Innovation Action (RIA), aims at improving substantially the cost effectiveness and performance of gallium nitride (GaN) based millimetre wave components. The project

DocID: 1vs71 - View Document

EAS™ eGaNAMP2016 Product Brief Class-D High-Performance eGaN FET Amplifier Module Gallium Nitride Complete Class-D Amplifier Solution •

DocID: 1voZJ - View Document

In-situ Gallium-doping for forming p+ Germanium-Tin and application in Germanium-Tin PIN photodetector Wei Wang,1 Saumitra Vajandar,2 Sin Leng Lim,2 Yuan Dong,1 Vijay Richard D’Costa,1 Thomas Osipowicz,2 Eng Soon Tok,2

DocID: 1vnU6 - View Document

Press ReleaseFLOSFIA Inc. raises JPY 800 Million Series C Round for Gallium Oxide Power Devices FLOSFIA Inc. has announced that it has raised JPY 800 million from several existing and

DocID: 1uNhX - View Document

Université Paris Diderot (Paris 7) École doctorale 386 : Sciences Mathématiques de Paris Centre Équipe Gallium, Inria Doctorat Informatique

DocID: 1uyAz - View Document