F.D. Auret S.A. / T. Sekiguchi Nanomaterials Laboratory / Ge / Scientific Production Company / World Scientific / PATFIT / CONTIN / Philips / Komatsu / Risø National Laboratory / /
Country
Japan / Singapore / Denmark / /
Currency
Peso / USD / /
Event
Business Partnership / Product Issues / /
Facility
T. Ohdaira National Institute of Advanced Industrial Science / National Institute of Advanced Industrial Science / National Institute / Japan Atomic Energy Research Institute / A. Kawasuso Advanced Science Research Center / /
IndustryTerm
positron energy / energy range / semiconductor devices / free carrier concentration / improved carrier mobility / energy resolution / ion energy / carrier mobility / energy resolution function / energy / energy-variable slow positron beam / incident positron energy / high energy / inversion algorithm / electron-beam energy / /
MusicAlbum
Culture / Technology / Sports / Science / /
Organization
National Institute of Advanced Industrial Science / A. Kawasuso Advanced Science Research Center / T. Ohdaira National Institute of Advanced Industrial Science and Technology / National Institute for Materials Science / Materials Research Society / Z. Q. Chen / M. Maekawa / S. Yamamoto / and A. Kawasuso Advanced Science Research Center / Japan Atomic Energy Research Institute / Ministry of Education / /
Person
Nuttawuth Buthrath / Akira Yoshida / R.M. Mehra / Guiti R. Massoumi / J. de Vries / James S. Williams / S. Makinen / A. Van Veen / R.A. Hakvoort / S. Thomas Picraux / Su-Huai Wei / M. Manninen / R.M. Nieminen / M.R. Ijpma / M. J. Puska / Z. Tang / H. Schut / Akihiro Wakahara / Alex Zunger / P.E. Mijnarends / Peter J. Simpson / Peter J. Schultz / Michael O. Thompson / /
PHYSICAL REVIEW B 69, 035210 共2004兲 Evolution of voids in Al¿ -implanted ZnO probed by a slow positron beam Z. Q. Chen, M. Maekawa, S. Yamamoto, and A. Kawasuso Advanced Science Research Center, Japan Atomic Energy