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Semiconductor device fabrication / Superhard materials / Transistors / Ceramic materials / Atomic layer deposition / High-k dielectric / Ruthenium(IV) oxide / Silicon dioxide / Titanium nitride / Chemistry / Matter / Electronic engineering
Date: 2010-12-27 22:22:07
Semiconductor device fabrication
Superhard materials
Transistors
Ceramic materials
Atomic layer deposition
High-k dielectric
Ruthenium(IV) oxide
Silicon dioxide
Titanium nitride
Chemistry
Matter
Electronic engineering

Photon Factory Activity Report 2009 #27 Part BSurface and Interface 2C/2008S2003 Interfacial reactions for Ru metal-electrode/HfSiON gate stack structures studied

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