Atomic layer etching of HfO2 film for gate oxide in MOSFET devices Nano Lee1, Nano Choi2, and Nano Kim1, 2, 3* 1 SKKU Advanced Institude of Nano Technology(SAINT), Sungkyunkwan University, Suwon, Kyunggi-do, Sou

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Date: 2015-12-28 20:11:39		Atomic layer etching of HfO2 film for gate oxide in MOSFET devices Nano Lee1, Nano Choi2, and Nano Kim1, 2, 3* 1 SKKU Advanced Institude of Nano Technology(SAINT), Sungkyunkwan University, Suwon, Kyunggi-do, Sou Add to Reading List Source URL: sympo.nanokorea.or.kr Download Document from Source Website File Size: 21,70 KB Share Document on Facebook