![Semiconductor devices / Digital electronics / Integrated circuits / MOSFET / 11 nanometer / Indium gallium arsenide / Gate oxide / International Electron Devices Meeting / Transistor / Electronic engineering / Electronics / Chemistry Semiconductor devices / Digital electronics / Integrated circuits / MOSFET / 11 nanometer / Indium gallium arsenide / Gate oxide / International Electron Devices Meeting / Transistor / Electronic engineering / Electronics / Chemistry](https://www.pdfsearch.io/img/49b73a2f94fa595d85d49bd298b84543.jpg)
| Document Date: 2014-04-22 16:21:50 Open Document File Size: 1,52 MBShare Result on Facebook
City Cl2 / / Company Lg / Intel / Microsystems Technology Laboratories / / Currency USD / / / / IndustryTerm tight metal contact spacing / / Organization National Science Foundation / MIT / / Person Tao Yu / Jesús A. del Alamo / Dimitri A. Antoniadis / Xin Zhao / Mo etch / Mo (d) W Mo / / / ProgrammingLanguage V / / ProvinceOrState Missouri / / Technology lithography / simulation / CVD / dielectric / /
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