III-V 4D Transistors 1) J. J. Gu , X. W. Wang , J. Shao 3), A. T. Neal 1), M. J. Manfra 3), R. G. Gordon 2), and P. D. Ye 1)* 1) - R v Wang - Document - PDFSEARCH.IO

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	III-V 4D Transistors 1) J. J. Gu , X. W. Wang , J. Shao 3), A. T. Neal 1), M. J. Manfra 3), R. G. Gordon 2), and P. D. Ye 1)* 1) Add to Reading List Document Date: 2012-06-08 13:52:32 Open Document File Size: 512,82 KB Share Result on Facebook City Cambridge / / Company Ge / / Country United States / / / Facility Purdue University / Harvard University / / / IndustryTerm typical device / gate metal / metal gate / e-beam / device applications / elegant solution / nanowire devices / / Organization SRC FCRP MSD Focus Center / Department of Chemistry and Chemical Biology / Harvard University / Department of Physics / National Science Foundation / Purdue University / / / ProvinceOrState Massachusetts / / Technology lithography system / dielectric / / SocialTag Nanowire Semiconductor devices Indium gallium arsenide MOSFET Transistor Semiconductor device fabrication Field-effect transistor Chemistry Nanoelectronics Technology

III-V 4D Transistors 1) J. J. Gu , X. W. Wang , J. Shao 3), A. T. Neal 1), M. J. Manfra 3), R. G. Gordon 2), and P. D. Ye 1)* 1)Add to Reading List