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III-V 4D Transistors 1) J. J. Gu , X. W. Wang , J. Shao 3), A. T. Neal 1), M. J. Manfra 3), R. G. Gordon 2), and P. D. Ye 1)* 1)
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Document Date: 2012-06-08 13:52:32
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File Size: 512,82 KB
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Cambridge /
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Ge /
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United States /
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Purdue University /
Harvard University /
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IndustryTerm
typical device /
gate metal /
metal gate /
e-beam /
device applications /
elegant solution /
nanowire devices /
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SRC FCRP MSD Focus Center /
Department of Chemistry and Chemical Biology /
Harvard University /
Department of Physics /
National Science Foundation /
Purdue University /
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Massachusetts /
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Technology
lithography system /
dielectric /
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SocialTag
Nanowire
Semiconductor devices
Indium gallium arsenide
MOSFET
Transistor
Semiconductor device fabrication
Field-effect transistor
Chemistry
Nanoelectronics
Technology