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Photoemission spectroscopy / Polycrystalline silicon / Physics / Chemistry / Anions / Silicide


Photon Factory Activity Report 2005 #23Part BSurface and Interface 2C/2002S2-002 Mechanism of the interfacial reaction for polycrystalline-Si /HfO2/Si gate stacks
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Document Date: 2010-01-05 10:32:22

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City

Tokyo / /

Country

Japan / /

Currency

pence / /

/

Facility

The University of Tokyo / Photon Factory / /

IndustryTerm

metal / energy / using a Hf metal / /

Organization

High-Energy Accelerator Research Organization / University of Tokyo / /

Technology

spectroscopy / /

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