Toshiba / BP / vF / Simmons / Hollenberg L. C. L. / ASSOCIATED CONTENT / /
Country
Guinea / United States / / /
Facility
Delft University of Technology / Kavli Institute of Nanoscience / Columbia University / /
IndustryTerm
charge carrier islands / fabricated single dot devices / molecular devices / typical device / addition energy / quantum confinement energy gap / carrier island / fabricated single-dot devices / quantum dot devices / graphene charge carrier island / addition energy graphene single electron transistors / charge carrier / thermal energy kBT / charge carrier island / electronic devices / thermal energy / possible applications / charge-carrier island / energy difference / Large addition energy quantum dots / energy / /
OperatingSystem
Fermi / /
Organization
North Atlantic Treaty Organization / American Chemical Society / V (red) / Department of Physics / Delft University of Technology / Dutch Foundation for Fundamental Research / Kavli Institute of Nanoscience / Columbia University / New York / /
Person
Furthermore / Gallagher / Natelson / /
Position
AUTHOR INFORMATION Corresponding Author *E-mail / Dean / D. J. / RT / /
Letter pubs.acs.org/NanoLett Quantum Dots at Room Temperature Carved out from Few-Layer Graphene Amelia Barreiro,*,†,‡ Herre S. J. van der Zant,† and Lieven M. K. Vandersypen†