Principal Research Results Fabrication of High Performance 4kV SiC Schottky Barrier Diode Background Silicon carbide (SiC) is a promising material for high-voltage and low-loss power semiconductor devices because of its - SIC - Document - PDFSEARCH.IO

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	Principal Research Results Fabrication of High Performance 4kV SiC Schottky Barrier Diode Background Silicon carbide (SiC) is a promising material for high-voltage and low-loss power semiconductor devices because of its Add to Reading List Document Date: 2008-09-29 03:24:45 Open Document File Size: 196,82 KB Share Result on Facebook IndustryTerm metal / metal/semiconductor contact / low-loss power semiconductor devices / integrated energy service / / Person Mo Schottky / / Position Researcher / / Technology semiconductor / semiconductor devices / / SocialTag Semiconductor device fabrication Schottky barrier Schottky diode Diode Ohmic contact Power semiconductor device Silicon carbide Semiconductor device Chemistry Manufacturing

Principal Research Results Fabrication of High Performance 4kV SiC Schottky Barrier Diode Background Silicon carbide (SiC) is a promising material for high-voltage and low-loss power semiconductor devices because of itsAdd to Reading List