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at very large bias a current saturation around 1
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Document Date: 2009-05-31 18:33:39
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City
Barcelona /
/
Company
vF /
John Wiley & Sons /
/
Country
Spain /
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Facility
Campus UAB /
Fq Building /
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IndustryTerm
electronic devices /
zero-energy band gap /
meV energy /
metal single-wall nanotubes /
graphene devices /
energy gap /
metal nanotubes /
nm wide graphene device /
carrier-defect scattering /
energy /
/
OperatingSystem
Fermi /
/
Person
Marie Curie-Paris /
Eq /
/
Position
model /
/
Product
F-75015 Paris /
/
Technology
spectroscopy /
lithography /
Semiconductor Devices /
fabricated using electron-beam lithography /
/