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 Date: 2016-08-08 18:15:09Oxides Semiconductor device fabrication Thin film deposition Surface science Desorption Gallium(III) oxide Suboxide Ultra-high vacuum Epitaxy |
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| First Page | Document Content | |
|---|---|---|
Date: 2016-08-08 18:15:09Oxides Semiconductor device fabrication Thin film deposition Surface science Desorption Gallium(III) oxide Suboxide Ultra-high vacuum Epitaxy |
Add to Reading List |
Comparison of the growth kinetics of In2O3 and Ga2O3 and their suboxide desorption during plasma-assisted molecular beam epitaxy Patrick Vogt and Oliver Bierwagen Citation: Applied Physics Letters 109, ); doi