![Oxides / Semiconductor device fabrication / Thin film deposition / Surface science / Desorption / Gallium(III) oxide / Suboxide / Ultra-high vacuum / Epitaxy Oxides / Semiconductor device fabrication / Thin film deposition / Surface science / Desorption / Gallium(III) oxide / Suboxide / Ultra-high vacuum / Epitaxy](https://www.pdfsearch.io/img/06126da3ff41e42292fcf344661867ba.jpg) Date: 2016-08-08 18:15:09Oxides Semiconductor device fabrication Thin film deposition Surface science Desorption Gallium(III) oxide Suboxide Ultra-high vacuum Epitaxy | | Comparison of the growth kinetics of In2O3 and Ga2O3 and their suboxide desorption during plasma-assisted molecular beam epitaxy Patrick Vogt and Oliver Bierwagen Citation: Applied Physics Letters 109, ); doiAdd to Reading ListSource URL: www.pdi-berlin.deDownload Document from Source Website File Size: 891,30 KBShare Document on Facebook
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