Compact, Physics-based Modeling of Nanoscale Limits of Double-Gate MOSFETs Qiang Chen, Lihui Wang, Raghunath Murali and James D. Meindl March 10, 2004 - Short-channel effect - Document - PDFSEARCH.IO

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	Compact, Physics-based Modeling of Nanoscale Limits of Double-Gate MOSFETs Qiang Chen, Lihui Wang, Raghunath Murali and James D. Meindl March 10, 2004 Add to Reading List Document Date: 2010-03-19 15:37:51 Open Document File Size: 1,74 MB Share Result on Facebook City Boston / / IndustryTerm analytical solution / / NaturalFeature Si channel / / Person Qiang Chen / Lihui Wang / Raghunath Murali / / SocialTag Electronic engineering High-k dielectric Threshold voltage Short-channel effect Meindl Symmetric matrix Electrical engineering Electromagnetism MOSFET

Compact, Physics-based Modeling of Nanoscale Limits of Double-Gate MOSFETs Qiang Chen, Lihui Wang, Raghunath Murali and James D. Meindl March 10, 2004Add to Reading List