Silicide

Results: 45



#Item
11Anions / Silicide / Photoemission spectroscopy

Surface and Interface 2C/2002S2-002 Effects of interlayer and annealing on chemical states of HfO2 gate insulators studied by photoemission spectroscopy

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Source URL: pfwww.kek.jp

Language: English - Date: 2010-01-05 10:30:05
12Annealing / Silicide / Photoemission spectroscopy / Chemistry / Physics / Electrical engineering / Electronic engineering / High-k dielectric / Transistors

Surface and Interface 2C/2002S2-002 Chemical reaction and metallic cluster formation by annealing-temperature control in ZrO2 gate insulator on Si

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Source URL: pfwww.kek.jp

Language: English - Date: 2010-01-05 10:30:04
13Spectroscopy / Emission spectroscopy / Annealing / Silicide / Polycrystalline silicon / Photoemission spectroscopy / High-k dielectric / Absorption spectroscopy / Core electron / Chemistry / Physics / Science

Photon Factory Activity Report 2006 #24 Part BSurface and Interface 2C/2005S2-002 Suppression of silicidation and crystallization by atmosphere controlled annealing

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Source URL: pfwww.kek.jp

Language: English - Date: 2010-01-05 10:33:38
14Condensed matter physics / Photoemission spectroscopy / Silicide / Angle-resolved photoemission spectroscopy / Stellar classification / Electron / Physics / Emission spectroscopy / Chemistry

Photon Factory Activity Report 2002 #20 Part BSurface and Interface 18A/2001G205 Growth of Fe silicide films on Si(111)7x7 and Si(111)1x1-H surfaces

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Source URL: pfwww.kek.jp

Language: English - Date: 2010-01-05 10:27:34
15Photoemission spectroscopy / Polycrystalline silicon / Physics / Chemistry / Anions / Silicide

Photon Factory Activity Report 2005 #23Part BSurface and Interface 2C/2002S2-002 Mechanism of the interfacial reaction for polycrystalline-Si /HfO2/Si gate stacks

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Source URL: pfwww.kek.jp

Language: English - Date: 2010-01-05 10:32:22
16Ceramic materials / Abrasives / Superhard materials / Gemstones / Silicon carbide / Silicide / Polymorphs of silicon carbide / Stellar classification / Chemistry / Carbides / Manufacturing

Photon Factory Activity Report 2006 #24 Part BSurface and Interface 19B/2006G009 Electronic States of Fe/4H-SiC Interface by SXFS

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Source URL: pfwww.kek.jp

Language: English - Date: 2010-01-05 10:33:39
17Transistors / Annealing / Silicon monoxide / High-k dielectric / Layer / Silicon dioxide / Silicide / Photoemission spectroscopy / Chemistry / Semiconductor device fabrication / Silicon compounds

Photon Factory Activity Report 2005 #23Part BSurface and Interface 2C/2002S2-002 Annealing-temperature dependence: Mechanism of Hf silicidation in HfO2 gate

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Source URL: pfwww.kek.jp

Language: English - Date: 2010-01-05 10:32:21
18Silicide / Polycrystalline silicon / Photoemission spectroscopy / High-k dielectric / Physics / Sputtering / Annealing / Chemistry / Materials science / Anions

Photon Factory Activity Report 2004 #22 Part BSurface and Interface 2C/2002S2-002 Interfacial reaction of polycrystalline-Si /HfO2/Si gate stacks with annealing

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Source URL: pfwww.kek.jp

Language: English - Date: 2010-01-05 10:31:28
19Silicon monoxide / Silicon compounds / Anions / Silicide

Photon Factory Activity Report 2006 #24 Part BSurface and Interface 18A/ 2006G007 Thickness-dependent electronic structure of Dy silicide films grown

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Source URL: pfwww.kek.jp

Language: English - Date: 2010-01-05 10:33:39
20Nitrides / Superhard materials / Materials science / Thin film deposition / High-k dielectric / Transistors / Silicide / Titanium nitride / Atomic layer deposition / Chemistry / Semiconductor device fabrication / Matter

Photon Factory Activity Report 2007 #25 Part BSurface and Interface 2C/2005S2-002 Hf-silicidation reactions due to vacuum annealing for a-Si/ HfSiO(N)/ Si gate

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Source URL: pfwww.kek.jp

Language: English - Date: 2010-01-05 10:34:50
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