| Document Date: 2010-12-27 22:22:08
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Country Japan / / Currency pence / / / Facility University of Tokyo / Institute of Materials Structure Science / / IndustryTerm metal-oxide-semiconductor / backbond site / e-beam / large binding energy shift / / Organization Research Organization / Institute of Materials Structure Science / University of Tokyo / / Position RT / / Technology semiconductor / spectroscopy / hybridization / dielectric / x-ray / /
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Photon Factory Activity Report 2009 #27 Part BSurface and Interface 18A/2008G186 Effect of oxygen coadsorption on titanium silicide formation on Si(001)