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Technology / Crystals / Wafer / Doping / Ingot / Semiconductor growth / Dopant / Solar cell / N-type semiconductor / Semiconductor device fabrication / Chemistry / Materials science


Estimation of solidification interface shapes in a boron–phosphorus compensated multicrystalline silicon ingot via photoluminescence imaging
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Document Date: 2013-01-30 21:25:23

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File Size: 1,30 MB

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City

Orlando / PVSEC / Frankfurt / Valencia / Lyon / /

Company

IPL / S.Y. Lim S.P. / BT / Pearson-Hall Inc. / Elsevier B.V. / John Wiley & Sons / /

Country

Germany / France / Japan / /

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Facility

College of Engineering / The Australian National University / /

IndustryTerm

majority carrier densities / wafer-based photoluminescence imaging technique / dopant density imaging / carrier diffusivity / argon gas / numerical simulation software / metal contaminants / dopant density imaging methods / photoluminescence imaging / image processing procedure / imaging / majority carrier density / carrier mobility / ultrasound imaging probe / /

Organization

Research School of Engineering / College of Engineering and Computer Science / Australian National University / Canberra / National Aeronautics and Space Administration / Australian Research Council / /

Person

APOLLON SOLAR / W. Schroder / D. Camel / Crystal Growth / /

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Position

representative / Corresponding author / /

Product

R1 instrument / Franklin / R1 / /

ProvinceOrState

Texas / /

PublishedMedium

Applied Physics Letters / Journal of Applied Physics / /

Technology

laser / X-ray / crystallization / ultrasound / simulation / recombination / image processing / thermal insulation / /

URL

http /

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