| Document Date: 2013-09-23 14:52:14
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City Gran Canaria / Surrey / San Jose / / Company Thomson / R. A. C. R. Cohen N. A. / C. E. Png S. P. / / Continent Europe / / Country United States / Spain / / Facility University of Surrey / G. T. Reed Advanced Technology Institute / / IndustryTerm silicon p-i-n phase modulator utilising free carrier injection / device real estate / p-n carrier / carrier confinement / art devices / carrier concentration variation / optical modulation using majority carrier plasma dispersion effect / majority carrier devices / minority carrier recombination lifetime / silicon p-i-n device / terminal devices / micrometers long device / speed short reach interconnect technology / carrier depletion / compact real estate / terminal device / / Organization University of Surrey / G. T. Reed Advanced Technology Institute / University of Southampton / / Person A. P. Knights / F. Milesi / G. T. Reed / F. Y. Gardes / G. Mashanovich / J. M. Fedeli / / Position D. J. / D. J. Thomson / / ProvinceOrState California / / PublishedMedium Optics Express / / Technology broadband / high speed short reach interconnect technology / simulation / recombination / photolithography / /
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40 Gb/s high speed silicon modulator for TE and TM polarisation F. Y. Gardes, D. J. Thomson, G. T. Reed Advanced Technology Institute, University of Surrey, Guildford, Surrey, UK Abstract