Consider the effect of irradiating a p-n junction with light. Let’s only look at the reverse bias saturation current: Finally, the total diode current is the sum of the hole and electron currents across the p-n juncti

First Page		Document Content
Date: 2014-02-11 22:56:35 Bipolar junction transistor Transistor Common emitter P–n junction Silicon-controlled rectifier Biasing Diodes Parasitic structure Bipolar transistor biasing Electrical engineering Electronic engineering Electromagnetism		Consider the effect of irradiating a p-n junction with light. Let’s only look at the reverse bias saturation current: Finally, the total diode current is the sum of the hole and electron currents across the p-n juncti Add to Reading List Source URL: nanofab.caltech.edu Download Document from Source Website File Size: 2,15 MB Share Document on Facebook

	Is Interaction Necessary for Distributed Private Learning? Adam Smith∗ , Abhradeep Thakurta† , Jalaj Upadhyay∗ of Electrical Engineering and Computer Science, Pennsylvania State University, Email: {asmith, jalaj}@p DocID: 1xVSf - View Document
	Imperial College London Department of Electrical and Electronic Engineering MEng Individual Project Project Title: DocID: 1xVMN - View Document
	Baris Kasikci Assistant Professor Electrical Engineering and Computer Science University of Michigan 4820 BBB 2260 Hayward Street DocID: 1xVL2 - View Document
	Automatic Generation of Local Repairs for Boolean Programs Roopsha Samanta, Jyotirmoy V. Deshmukh and E. Allen Emerson Department of Electrical and Computer Engineering and Department of Computer Sciences, The University DocID: 1xVs1 - View Document
	Bounded Verification with On-the-Fly Discrepancy Computation ? Chuchu Fan and Sayan Mitra {cfan10,mitras}@illinois.edu Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign. DocID: 1xVnP - View Document