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Silicon / Thermal oxidation / Deal–Grove model / Oxygen / Psychrometrics / Ultra-high-purity steam for oxidation and annealing / Oxide / Water vapor / Properties of water / Chemistry / Matter / Semiconductor device fabrication


Improved Oxide Growth Rate and Uniformity through New Steam Delivery Method
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Document Date: 2007-01-22 11:24:28

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File Size: 208,47 KB

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