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Charge carriers / Nanomaterials / Quantum electronics / Semiconductor devices / Nitrides / Quantum dot / Potential well / Spontaneous emission / Band gap / Chemistry / Physics / Condensed matter physics


Direct bandgap silicon quantum dots achieved via capping with electronegative ligands 1,2 1 A. N. Poddubny, 2K. Dohnalova
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Document Date: 2014-02-15 13:17:03

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File Size: 266,21 KB

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City

Saint-Petersburg / /

Country

Russia / /

Facility

Dohnalova Ioffe Physical-Technical Institute / Waals-Zeeman Institute / University of Amsterdam / /

IndustryTerm

orbital energy / bandgap energy / valence s/p-orbital energy / porbital energy / /

Organization

University of Amsterdam / Dohnalova Ioffe Physical-Technical Institute / Russian Academy of Sciences / /

Technology

semiconductor / quantum dots / optoelectronics / simulation / /

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