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Semiconductor device fabrication / Ceramic materials / Silicon / Plasma processing / Thin film deposition / Silicon dioxide / Amorphous silicon / Staebler–Wronski effect / Silicon nitride / Chemistry / Matter / Materials science


Recombination and thin film properties of silicon nitride and amorphous silicon passivated c-Si following ammonia plasma exposure Yimao Wan, Keith R. McIntosh, Andrew F. Thomson, and Andres Cuevas Citation: Applied Physi
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Document Date: 2015-04-15 13:13:45


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File Size: 1,18 MB

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Company

C 2015 AIP Publishing LLC. / Vertex / Shimizu / Thin Solid Films / RCA / /

Continent

America / /

Country

Germany / Australia / /

Currency

USD / /

Facility

PECVD reactor / Australian National University / AK400 PECVD reactor / /

IndustryTerm

film network / metal / photoconductance tool / front metal contact / carrier lifetime / chemical bond / gas flows / chemical vapour depositions / uniform carrier concentration / chemical structure / /

MedicalTreatment

radiation / /

Organization

Research School of Engineering / Universitat / Australian National University / Canberra / /

Person

N. Posthuma / A. Descoeudres / B. Demaurex / Andrew F. Thomson / S. De Wolf / J. Poortmans / Keith R. McIntosh / C. Ballif / S. Dauwe / R. Mertens / E. Van Kerschaver / F. A. Modine / Andres Cuevas / G. E. Jellison / Jr. / Z. Charles Holman / E. Simoen / /

PublishedMedium

Applied Physics Letters / /

Technology

semiconductor / radiation / dielectric / microwave / Recombination / deposited using an AK400 microwave/radio-frequency / /

URL

http /

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