Si / Piscataway / Peabody / New York / Madison / Theiss / Arlington / using Si/SiGe/Si / /
Company
Lg / Getty S. A. / Scott A. S. / Strained Bilayer Thin Films / Ge / Epidermal Electronics / Agilent / COX / High-Performance Flexible Electronics / GHz Radio / Creative Commons / Microchem Corp. / /
Country
United States / /
Currency
pence / / /
Facility
Rutgers University / University of Texas / University of Wisconsin-Madison / /
IndustryTerm
subsequent processing / speed thin-film transistor technology / source/drain metal consisting / rigid devices / high-frequency wireless system / finger device / metal contacts / Transfer printing / low-energy phosphorus ion implantation / wireless communications / low-power and high-speed flexible-electronics applications / connected devices / energy / unstrained-channel reference device / manufacturable large-area applications / electronics applications / electronic applications / biomedical wireless devices / stretchable electronics / electronics / lexible electronics / fabricated unstrained device / typical scaling law / laser-driven non-contact transfer printing / logic technology / reference devices / chemical cleaning procedure / /
NaturalFeature
Si channel / /
Organization
University of Texas at Arlington / National Science Foundation / Rutgers University / Department of Materials Science and Engineering / Cambridge Univ. / NanoFAB Center / Department of Electrical and Computer Engineering / Department of Electrical / University of Wisconsin / /
Person
Nat / Gernot Pomrenke / Nano / / /
Position
program manager / Author / manager at AFOSR / /
ProgrammingLanguage
DC / /
ProvinceOrState
Texas / New Jersey / Wisconsin / New York / South Dakota / New Mexico / Massachusetts / /
Fast flexible electronics with strained silicon nanomembranes SUBJECT AREAS: ELECTRICAL AND ELECTRONIC ENGINEERING