Back to Results
First PageMeta Content
Raman spectroscopy / Scanning probe microscopy / Raman scattering / Silicon-germanium / Laser / Microscopy / Atomic force microscopy / Spectroscopy / Surface science / Chemistry / Science / Physics


Imaging and strain analysis of nano-scale SiGe structures by tip-enhanced Raman spectroscopy
Add to Reading List

Document Date: 2012-07-13 02:47:38

Open Document

File Size: 990,63 KB

Share Result on Facebook

City

Moscow / Si / Dresden / New York / Berlin / /

Company

Center Nanoelectronic Technologies / Cambridge University Press / Germany Globalfoundries Dresden Module One LLC & Co. KG / Ge / Elsevier B.V. / ANSYS / Raman / NT-MDT Co. / Thin Solid Films / NanoWorld AG / /

Country

Germany / Switzerland / Russia / /

/

Facility

Robert-Koch Institute / /

IndustryTerm

chemical microscopy / nite element modeling software / subsequent wet chemical etching / chemical identity / metal-oxide-semiconductor / web version / /

Organization

Cambridge University / Robert-Koch Institute / Institut f¨ / /

Person

Phillip Olk / Pavel Dorozhkin / Y.D. Suh / V / David Lehninger / Ina Ostermay / Thomas Hartling / Jochen Rinderknecht / Y. Zhang / V / M. Green / Sven Niese / Michael Hecker / Martin Weisheit / Andreas Naumann / Lukas M. Eng / Peter Hermann / /

Position

Corresponding author at /

Product

B 52 / /

ProvinceOrState

New York / /

PublishedMedium

Journal of Optics A /

Technology

semiconductor / laser / spectroscopy / /

URL

www.elsevier.com/locate/ultramic / /

SocialTag