Back to Results
First PageMeta Content
Environmental chemistry / Materials science / Spectroscopy / Physics / XANES / Halide / Extended X-ray absorption fine structure / X-ray absorption fine structure / Science / Chemistry / Condensed matter physics


Surface and Interface 11B/2002G260 Spatial distribution of metal induced gap state at alkali halide/metal interface Genki YOSHIKAWA*1, Manabu KIGUCHI2, Susumu IKEDA2, and Koichiro SAIKI1,2
Add to Reading List

Document Date: 2010-01-05 10:30:23


Open Document

File Size: 139,81 KB

Share Result on Facebook

City

Tokyo / /

Company

Knudsen / /

Country

Japan / /

/

Facility

Institute of Materials Structure Science / The University of Tokyo / Photon Factory / station BL / /

IndustryTerm

alkali halide/metal systems / metal / anion site / semiconductor/metal interface / free-electron-like metal wave function / semiconductor/metal interfaces / metal substrate / metal induced gap state / alkali halide/metal interface / alkali halide/metal / /

Organization

University of Tokyo / Graduate School / Institute of Materials Structure Science / /

Technology

semiconductor / X-ray / /

SocialTag