High-performance GaInAs GaAs quantum-dot lasers based on a single active layer. F.Schäfer,a) J.P.Reithmaier, and A. Forchel Technische Physik, Universität Würzburg, Am Hubland, DWürzburg , Germany (Received - Swets - Document - PDFSEARCH.IO

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Date: 2009-05-08 06:40:02 Optics Semiconductor lasers Physics Electromagnetism Quantum electronics Heat-assisted magnetic recording Laser diode Laser Indium gallium arsenide Quantum dot Quantum well Light-emitting diode		High-performance GaInAs / GaAs quantum-dot lasers based on a single active layer. F.Schäfer,a) J.P.Reithmaier, and A. Forchel Technische Physik, Universität Würzburg, Am Hubland, DWürzburg , Germany (Received Add to Reading List Source URL: www.1974eiko.co.jp Download Document from Source Website File Size: 105,52 KB Share Document on Facebook

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