Swiss Center for Electronics and Microtechnology THE FOUNDATIONS OF THE EKV MOS TRANSISTOR CHARGE-BASED MODEL C. Enz, M. Bucher, A.-S. Porret, - Swiss Center for Electronics and Microtechnology - Document - PDFSEARCH.IO

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	Swiss Center for Electronics and Microtechnology THE FOUNDATIONS OF THE EKV MOS TRANSISTOR CHARGE-BASED MODEL C. Enz, M. Bucher, A.-S. Porret, Add to Reading List Document Date: 2010-03-19 15:18:03 Open Document File Size: 358,15 KB Share Result on Facebook City MOS TRANSISTOR CHARGE / / Company Cox / / / IndustryTerm deep-submicron technologies / / OperatingSystem Fermi / / Organization V VP / Swiss Center for Electronics / Imd / / Person C. Enz / Low / / Position General / symmetrical model / VP / full circuit simulation model / VP / UT / nv VP / / Technology Lithography / simulation / deep-submicron technologies / / SocialTag NQS Threshold voltage Transistor Biasing Ekatarina Velika EKV MOSFET Model Electronic engineering Electrical engineering Electromagnetism

Swiss Center for Electronics and Microtechnology THE FOUNDATIONS OF THE EKV MOS TRANSISTOR CHARGE-BASED MODEL C. Enz, M. Bucher, A.-S. Porret,Add to Reading List