A CRITICAL ANALYSIS OF IGBT GEOMETRIES, WITH THE INTENTION OF MITIGATING UNDESIRABLE DESTRUCTION CAUSED BY FAULT SCENARIOS OF AN ADVERSE NATURE G. E. Leyh, SLAC, Menlo Park CAAbstract Megawa

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Date: 2003-05-07 14:01:39 Power electronics Semiconductor devices Insulated-gate bipolar transistor Transistor Bipolar junction transistor		A CRITICAL ANALYSIS OF IGBT GEOMETRIES, WITH THE INTENTION OF MITIGATING UNDESIRABLE DESTRUCTION CAUSED BY FAULT SCENARIOS OF AN ADVERSE NATURE G. E. Leyh, SLAC, Menlo Park CAAbstract Megawa Add to Reading List Source URL: www-group.slac.stanford.edu Download Document from Source Website File Size: 345,67 KB Share Document on Facebook

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