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Light-emitting diodes / Compound semiconductors / Inorganic compounds / Diode / Ion implantation / Carrier generation and recombination / Silicon carbide / Gallium phosphide / P–n junction / Chemistry / Optoelectronics / Lighting


Proceedings of ESSDERC, Grenoble, France, 2005 The effect of Dislocation Loops on the Light Emission of Silicon LEDs T. Hoang, P. LeMinh, J. Holleman, J. Schmitz MESA+ Research Institute, University of Twente, The Nethe
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Document Date: 2011-08-28 10:45:05

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City

Grenoble / /

Company

Diodes / A. M. Emelýanov N. A. / Agilent / /

Country

France / Netherlands / /

Currency

USD / /

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Facility

J. Schmitz MESA+ Research Institute / Homewood / University of Twente / /

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IndustryTerm

higher energy / minority carrier injection / silicon technology / implantation energy / energy leads / /

Organization

MESA+ Lab. / University of Twente / Dutch Technology Foundation / J. Schmitz MESA+ Research Institute / /

Person

Marcel Weusthof / Wai Lek Ng / Bob Schippers / E.I. Sjek / V / Tom Aarnink / /

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Position

representative / /

Product

LEDs / /

PublishedMedium

Physica B / /

Technology

silicon technology / recombination / optical fiber / IC technology / /

SocialTag