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APPLIED PHYSICS LETTERS 91, 202105 共2007兲 Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing Grace Huiqi Wang and Eng-Huat Toh Silicon Nano Device Laboratory, Department of Electrical and Comp
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Document Date: 2013-02-01 05:11:38
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APPLIED PHYSICS LETTERS 91, 202105 共2007兲 Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing Grace Huiqi Wang and Eng-Huat Toh Silicon Nano Device Laboratory, Department of Electrical and Comp