SISPAD 2012, September 5-7, 2012, Denver, CO, USA Analytical Model for the Threshold Voltage Variability due to Random Dopant Fluctuations in Junctionless FETs Antonio Gnudi, Susanna Reggiani, Elena Gnani, Giorgio Bacca - Threshold model - Document - PDFSEARCH.IO

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	SISPAD 2012, September 5-7, 2012, Denver, CO, USA Analytical Model for the Threshold Voltage Variability due to Random Dopant Fluctuations in Junctionless FETs Antonio Gnudi, Susanna Reggiani, Elena Gnani, Giorgio Bacca Add to Reading List Document Date: 2013-02-12 08:39:13 Open Document File Size: 498,42 KB Share Result on Facebook

SISPAD 2012, September 5-7, 2012, Denver, CO, USA Analytical Model for the Threshold Voltage Variability due to Random Dopant Fluctuations in Junctionless FETs Antonio Gnudi, Susanna Reggiani, Elena Gnani, Giorgio BaccaAdd to Reading List