Nr. 30 Januar 2010 SPG MITTEILUNGEN COMMUNICATIONS DE LA SSP

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Date: 2014-12-09 02:36:22 Physics Electromagnetism Spintronics Atomic physics Condensed matter physics Semiconductors Magnetism Rashba effect Electron Topological insulator Spinorbit interaction Spin		Nr. 30 Januar 2010 SPG MITTEILUNGEN COMMUNICATIONS DE LA SSP Add to Reading List Source URL: www.sps.ch Download Document from Source Website File Size: 1,71 MB Share Document on Facebook

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	Simulation Tool for IGBT modules R. Schnell ABB Switzerland Ltd, Semiconductors, Fabrikstrasse 3, CH – 5600 Lenzburg, Switzerland e-mail: Abstract: ABB has recently released a new simulation DocID: 1vk86 - View Document
	Reducing Gate-Driven Leakage in 2D Semiconductors: Two-dimensional materials such as graphene and MoS2 have a wide range of bandgaps and effective masses, making them suitable for many different applications including m DocID: 1vg3M - View Document
	The Toyota Riken International Workshop Organic Semiconductors, Conductors, and Electronics 　October 24, Wednesday　Octeber 25, Thursday 9:00 Hisao Ishii DocID: 1vehL - View Document
	ABB Semiconductors AG Soft Punch Through (SPT) Soft Punch Through (SPT) – Setting new Standards in 1200V IGBT S. Dewar, S. Linder, C. von Arx, A. Mukhitinov, G. Debled DocID: 1vaF8 - View Document