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Electronic design / MOSFET / Transconductance / Threshold voltage / Field-effect transistor / Diode / Transistor / CMOS / Organic field-effect transistor / Electronics / Electromagnetism / Electrical engineering


NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor
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Document Date: 2010-09-15 01:31:54

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File Size: 84,95 KB

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Company

Fairchild Semiconductor Corporation / NORMALIZED DSS BV / Case / SIEMENS / /

IndustryTerm

notebook computer power management / life systems / low voltage applications / portable electronics / accordance support device / Life support devices / /

Organization

A -1 / FR-4 Board / /

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Gate - Body Leakage / /

Position

Forward / DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Source Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward / gFS Forward / NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General / /

Product

GTO / /

ProgrammingLanguage

DC / /

Technology

notebook computer / Optoelectronics / board design / DMOS technology / change depending on the circuit board design / /

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